검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Small-signal characterization and modelling of 55 nm SiGe BiCMOS HBT up to 325 GHz Deng M, Quemerais T, Bouvot S, Gloria D, Chevalier P, Lepilliet S, Danneville F, Dambrine G Solid-State Electronics, 129, 150, 2017 |
| 2 |
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation Moschetti G, Wadefalk N, Nilsson PA, Roelens Y, Noudeviwa A, Desplanque L, Wallart X, Danneville F, Dambrine G, Bollaert S, Grahn J Solid-State Electronics, 64(1), 47, 2011 |
| 3 |
High frequency performance of sub-100 nm UTB-FDSOI featuring TiN/HfO2 gate stack Lim TC, Rozeau O, Buj C, Paccaud M, Lepilliet S, Dambrine G, Danneville F Solid-State Electronics, 53(4), 433, 2009 |
| 4 |
A selective epitaxy collector module for high-speed Si/SiGe:C HBTs Geynet B, Chevalier P, Brossard F, Vandelle B, Schwartzmann T, Buczko M, Avenier G, Dutartre D, Dambrine G, Danneville F, Chantre A Solid-State Electronics, 53(8), 873, 2009 |
| 5 |
Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain Borg M, Lefebvre E, Malmkvist M, Desplanque L, Wallart X, Roelens Y, Dambrine G, Cappy A, Bollaert S, Grahn J Solid-State Electronics, 52(5), 775, 2008 |
| 6 |
Noise modeling in fully depleted SOI MOSFETs Pailloncy G, Iniguez B, Dambrine G, Raskin JP, Danneville F Solid-State Electronics, 48(5), 813, 2004 |
| 7 |
0.25 mu m fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters Vanmackelberg M, Raynaud C, Faynot O, Pelloie JL, Tabone C, Grouillet A, Martin F, Dambrine G, Picheta L, Mackowiak E, Llinares P, Sevenhans J, Compagne E, Fletcher G, Flandre D, Dessard V, Vanhoenacker D, Raskin JP Solid-State Electronics, 46(3), 379, 2002 |