| 1 |
In-situ high-resolution low energy electron diffraction study of strain relaxation in heteroepitaxy of Bi(111) on Si(001): Interplay of strain state, misfit dislocation array and lattice parameter
Hattab H, Jnawali G, Horn-von Hoegen M
Thin Solid Films, 570, 159, 2014 |
| 2 |
Free surface nanopaterning with burried hexagonal dislocations array. Simulation of anisotropic elastic fields
Outtas T, Madani S, Adami L
Thin Solid Films, 517(1), 275, 2008 |
| 3 |
Mechanical Behavior of as-cast and high temperature exposed Ni-base superalloy B1900
Kim IS, Choi BG, Seo SM, Jo CY
Materials Science Forum, 449-4, 541, 2004 |
| 4 |
Interplay of dislocation network and island arrangement in SiGe films grown on Si(001)
Teichert C, Hofer C, Lyutovich K, Bauer M, Kasper E
Thin Solid Films, 380(1-2), 25, 2000 |
| 5 |
Bi surfactant mediated epitaxy of Ge on Si(111)
Horn-von Hoegen M, Heringdorf FJMZ, Kammler M, Schaeffer C, Reinking D, Hofmann KR
Thin Solid Films, 343-344, 579, 1999 |
| 6 |
Surfactant-grown low-doped germanium layers on silicon with high electron mobilities
Hofmann KR, Reinking D, Kammler M, Horn-von Hoegen M
Thin Solid Films, 321(1-2), 125, 1998 |
| 7 |
Surfactant-mediated epitaxy of Ge on Si: progress in growth and electrical characterization
Kammler M, Reinking D, Hofmann KR, Horn-von Hoegen M
Thin Solid Films, 336(1-2), 29, 1998 |
| 8 |
Studies of metamorphic III-V heterostructures by digital processing of HREM images
Rocher A, Snoeck E
Thin Solid Films, 319(1-2), 172, 1998 |
