| 1 |
Doping profile extraction in thin SOI films: Application to A2RAM
Wakam FT, Lacord J, Bawedin M, Martinie S, Cristoloveanu S, Ghibaudo G, Barbe JC
Solid-State Electronics, 159, 3, 2019 |
| 2 |
Advanced analytical modeling of double-gate Tunnel-FETs - A performance evaluation
Graef M, Hosenfeld F, Horst F, Farokhnejad A, Hain F, Iniguez B, Kloes A
Solid-State Electronics, 141, 31, 2018 |
| 3 |
Band engineering of a Si quantum dot solar cell by modification of B-doping profile
Kwak GY, Lee SH, Jang JS, Hong S, Kim A, Kim KJ
Solar Energy Materials and Solar Cells, 159, 80, 2017 |
| 4 |
Extending the limits of screen-printed metallization of phosphorus- and boron-doped surfaces
Werner S, Lohmuller E, Wolf A, Clement F
Solar Energy Materials and Solar Cells, 158, 37, 2016 |
| 5 |
Characterization of 4H-SiC surfaces by non-destructive techniques based on capacitance voltage measurements
Mizsei J, Czett A
Applied Surface Science, 301, 19, 2014 |
| 6 |
p/n junction depth control using amorphous silicon as a low temperature dopant source
Lavareda G, Velozo AD, de Carvalho CN, Amaral A
Thin Solid Films, 543, 122, 2013 |
| 7 |
Characterization of P-channel power trench MOSFETs with polycrystalline silicon germanium gate electrode for faster switching
Dikshit R, Daggubati M
Solid-State Electronics, 68, 4, 2012 |
| 8 |
Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL)
Cho S, Lee JH, O'uchi S, Endo K, Masahara M, Park BG
Solid-State Electronics, 54(10), 1060, 2010 |
| 9 |
Improved determination of phosphorus contamination during ion implantation by SRP and simulations
Kuruc M, Hulenyi L, Kinder R
Applied Surface Science, 255(18), 8110, 2009 |
| 10 |
Formation of polycrystalline-Si thin-film-transistors with a retrograde channel doping profile
Juang MH, Cheng SH, Jang SL
Solid-State Electronics, 53(3), 371, 2009 |
