검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Optimum location of silicide/Si interface in ultra-thin body SOI MOSFETs with recessed and elevated silicide source/drain contact structure Kim SD Solid-State Electronics, 53(10), 1112, 2009 |
| 2 |
SiGe elevated source/drain structure and nickel silicide contact layer for sub 0.1 mu m MOSFET fabrication Shim J, Oh H, Choi H, Sakaguchi T, Kurino H, Koyanagi M Applied Surface Science, 224(1-4), 260, 2004 |
| 3 |
Effects of contamination on selective epitaxial growth MacDonald BJ, Paton E, Adem E, En B Applied Surface Science, 231-2, 776, 2004 |