검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Quantification of germanium-induced suppression of interstitial injection during oxidation of silicon Martin TP, Jones KS, Camillo-Castillo RA, Hatem C, Xin Y, Elliman RG Journal of Materials Science, 52(17), 10387, 2017 |
| 2 |
Oxygen diffusion in TiO2 films studied by electron and ion Rutherford backscattering Marmitt GG, Nandi SK, Venkatachalam DK, Elliman RG, Vos M, Grande PL Thin Solid Films, 629, 97, 2017 |
| 3 |
Effect of crystallization on the reliability of unipolar resistive-switching in HfO2-based dielectrics Saleh MN, Venkatachalam DK, Elliman RG Current Applied Physics, 14, S88, 2014 |
| 4 |
Ion beam-mixed Ge electrodes for high capacity Li rechargeable batteries Rudawski NG, Yates BR, Holzworth MR, Jones KS, Elliman RG, Volinsky AA Journal of Power Sources, 223, 336, 2013 |
| 5 |
Insights for void formation in ion-implanted Ge Darby BL, Yates BR, Rudawski NG, Jones KS, Kontos A, Elliman RG Thin Solid Films, 519(18), 5962, 2011 |
| 6 |
Effect of n- and p-type dopants on patterned amorphous regrowth Morarka S, Rudawski NG, Law ME, Jones KS, Elliman RG Journal of Vacuum Science & Technology B, 28(1), C1F1, 2010 |
| 7 |
Effect of low Ge content on B diffusion in amorphous SiGe alloys Edelman LA, Elliman RG, Rubin L, Washington L, Jones KS Journal of Vacuum Science & Technology B, 26(1), 333, 2008 |
| 8 |
Defects in Ge and Si caused by 1 MeV Si+ implantation Hickey DP, Bryan ZL, Jones KS, Elliman RG, Haller EE Journal of Vacuum Science & Technology B, 26(1), 425, 2008 |
| 9 |
Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers Rudawski NG, Jones KS, Elliman RG Journal of Vacuum Science & Technology B, 26(1), 435, 2008 |
| 10 |
Isotopically enriched (BN)-B-10 nanotubes Yu J, Chen Y, Elliman RG, Petravic M Advanced Materials, 18(16), 2157, 2006 |