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| No. | Article |
|---|---|
| 1 |
High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth Takehiro S, Sakuraba M, Tsuchiya T, Murota J Thin Solid Films, 517(1), 346, 2008 |