검색결과 : 19건
| No. | Article |
|---|---|
| 1 |
Stability of the platinum electrode during high temperature annealing Golosov DA, Okojie JE, Zavadski SM, Rudenkov AS, Melnikov SN, Kolos VV Thin Solid Films, 661, 53, 2018 |
| 2 |
Multilevel metal/Pb(Zr0.52Ti0.48)O-3/TiOxNy/Si for next generation FeRAM technology node Sharma DK, Khosla R, Sharma SK Solid-State Electronics, 111, 42, 2015 |
| 3 |
Impurity substitution effects in BiFeO3 thin films-From a viewpoint of FeRAM applications Ishiwara H Current Applied Physics, 12(3), 603, 2012 |
| 4 |
Electrical characteristics of Si MFIS-FETs using P(VDF-TrFE) thin films Yoon JW, Yoon SM, Ishiwara H Current Applied Physics, 11(3), S225, 2011 |
| 5 |
Thickness-dependent ferroelectric properties of Mn-doped BiFeO3 films formed on Pt and SrRuO3/Pt electrodes by RF Sputtering Kim JH, Funakubo H, Sugiyama Y, Ishiwara H Current Applied Physics, 11(3), S228, 2011 |
| 6 |
Effects of electrodes on the properties of sol-gel PZT based capacitors in FeRAM Zhang MM, Jia Z, Ren TL Solid-State Electronics, 53(5), 473, 2009 |
| 7 |
Ferroelectric Bi3.25La0.75Ti3O12 thin films on a conductive Sr4Ru2O9 electrode obtained by pulsed laser deposition Chmielowski R, Madigou V, Ferrandis P, Zalecki R, Blicharski M, Leroux C Thin Solid Films, 515(16), 6314, 2007 |
| 8 |
Effect of LaNiO3 electrode on microstructural and ferroelectric properties of Bi3.25Eu0.75Ti3O12 thin films Kim KT, Kim CI, Kim JG, Kim GH Thin Solid Films, 515(20-21), 8082, 2007 |
| 9 |
Cell sensing margin of lead-free (Bi,La)(4)Ti3O12 thin film deposited on MTP cell structure in high density FeRAM device Choi JH, Yoo HS, Cho KW, Kim NK, Oh SH, Choi ES, Yeom SJ, Sun HJ, Lee SS, Lee KN, Hong SK, Hong TW, Kim IH, Ryu SL, Kweon SY Materials Science Forum, 510-511, 530, 2006 |
| 10 |
A SrRuO3/IrO2 top electrode FeRAM with CuBEOL process for embedded memory of 130 nm generation and beyond Kumura Y, Ozaki T, Kanaya H, Hidaka O, Shimojo Y, Shuto S, Yamada Y, Tomioka K, Yamakawa K, Yamazaki S, Takashima D, Miyakawa T, Shiratake S, Ohtsuki S, Kunishima I, Nitayama A Solid-State Electronics, 50(4), 606, 2006 |