검색결과 : 5건
No. | Article |
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1 |
Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O Fedorenko Y, Swerts J, Maes JW, Tois E, Haukka S, Wang CG, Wilk G, Delabie A, Deweerd W, De Gendt S Electrochemical and Solid State Letters, 10(5), H149, 2007 |
2 |
Atomic layer deposition of hafnium silicate gate dielectric layers Delabie A, Pourtois G, Caymax M, De Gendt S, Ragnarsson LA, Heyns M, Fedorenko Y, Swerts J, Maes JW Journal of Vacuum Science & Technology A, 25(4), 1302, 2007 |
3 |
Carrier profiling and crystal quality evaluation of thin AlxGa1-xAs (0.22 < x < 0.86) films by electrochemical capacitance/voltage technique Fedorenko Y, Jouhti T, Konttinen J, Likonen J, Pessa M Journal of the Electrochemical Society, 150(7), G380, 2003 |
4 |
Doping impurity distribution and crystal quality evaluation of AlGaAs : Si films (0.22 < x < 0.86) by electrochemical etching technique Fedorenko Y, Jouhti T, Konttinen J, Likonen J, Pessa M Thin Solid Films, 428(1-2), 181, 2003 |
5 |
Optimisation of growth temperature and post-growth annealing for GaInNAs/GaNAs/GaAs quantum-well structures emitting at 1.3 mu m Fedorenko Y, Jouhti T, Pavelescu EM, Karirinne S, Kontinnen J, Pessa M Thin Solid Films, 440(1-2), 195, 2003 |