화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O
Fedorenko Y, Swerts J, Maes JW, Tois E, Haukka S, Wang CG, Wilk G, Delabie A, Deweerd W, De Gendt S
Electrochemical and Solid State Letters, 10(5), H149, 2007
2 Atomic layer deposition of hafnium silicate gate dielectric layers
Delabie A, Pourtois G, Caymax M, De Gendt S, Ragnarsson LA, Heyns M, Fedorenko Y, Swerts J, Maes JW
Journal of Vacuum Science & Technology A, 25(4), 1302, 2007
3 Carrier profiling and crystal quality evaluation of thin AlxGa1-xAs (0.22 < x < 0.86) films by electrochemical capacitance/voltage technique
Fedorenko Y, Jouhti T, Konttinen J, Likonen J, Pessa M
Journal of the Electrochemical Society, 150(7), G380, 2003
4 Doping impurity distribution and crystal quality evaluation of AlGaAs : Si films (0.22 < x < 0.86) by electrochemical etching technique
Fedorenko Y, Jouhti T, Konttinen J, Likonen J, Pessa M
Thin Solid Films, 428(1-2), 181, 2003
5 Optimisation of growth temperature and post-growth annealing for GaInNAs/GaNAs/GaAs quantum-well structures emitting at 1.3 mu m
Fedorenko Y, Jouhti T, Pavelescu EM, Karirinne S, Kontinnen J, Pessa M
Thin Solid Films, 440(1-2), 195, 2003