검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Normally-off 4H-SiC trench-gate MOSFETs with high mobility Wu J, Hu J, Zhao JH, Wang X, Li X, Fursin L, Burke T Solid-State Electronics, 52(6), 909, 2008 |
| 2 |
Demonstration of the first SiC power integrated circuit Sheng K, Zhang YX, Su M, Zhao JH, Li XQ, Alexandrov P, Fursin L Solid-State Electronics, 52(10), 1636, 2008 |
| 3 |
High voltage (500V-14kV) 4H-SiC unipolar-bipolar Darlington transistors for high-power and high-temperature applications Zhao JH, Li X, Tone K, Alexandrov P, Fursin L, Carter J, Weiner M Materials Science Forum, 457-460, 957, 2004 |
| 4 |
2.5KV-30A inductively loaded half-bridge inverter switching using 4H-SiC MPS free-wheeling diodes Li Y, Fursin L, Wu J, Alexandrov P, Zhao JH Materials Science Forum, 457-460, 1097, 2004 |
| 5 |
4,308V, 20.9 m Omega center dot cm(2) 4H-SiC MPS diodes based on a 30 mu m drift layer Wu J, Fursin L, Li Y, Alexandrov P, Zhao JH Materials Science Forum, 457-460, 1109, 2004 |
| 6 |
The first 4H-SiC BJT-based 20 kHz, 7HP PWM DC-to-AC inverter for induction motor control applications Zhao JH, Zhang J, Luo Y, Hu X, Li Y, Yu H, Lai J, Alexandrov P, Fursin L, Li X, Carter J, Weiner M Materials Science Forum, 457-460, 1137, 2004 |
| 7 |
1,530V, 17.5 m Omega cm(2) normally-off 4H-SiC VJFET design, fabrication and characterization Fursin L, Li X, Zhao JH Materials Science Forum, 457-460, 1157, 2004 |
| 8 |
4,340V, 40 m Omega cm(2) normally-off 4H-SiC VJFET Zhao JH, Fursin L, Alexandrov P, Li X, Weiner M Materials Science Forum, 457-460, 1161, 2004 |
| 9 |
6A, 1kV 4H-SiC normally-off trenched-and-implanted vertical JFETs Zhao JH, Tone K, Li X, Alexandrov P, Fursin L, Weiner M Materials Science Forum, 457-460, 1213, 2004 |
| 10 |
On the temperature coefficient of 4H-SiC BJT current gain Li X, Luo Y, Fursin L, Zhao JH, Pan M, Alexandrov P, Weiner M Solid-State Electronics, 47(2), 233, 2003 |