화학공학소재연구정보센터
검색결과 : 16건
No. Article
1 Elevation of urinary methylmolonic acid induces the suppression of megalin-mediated endocytotic cycles during vitamin B-12 deficiency
Shiga T, Kawata T, Furusho T, Tadokoro T, Suzuki T, Yamamoto Y
Biochemical and Biophysical Research Communications, 465(2), 206, 2015
2 Crystal growth of micropipe free 4H-SiC on 4H-SiC{0 3 (3)over-bar 8} seed and high-purity semi-insulating 6H-SiC
Shiomi H, Kinoshita H, Furusho T, Hayashi T, Tajima M, Higashi E
Journal of Crystal Growth, 292(2), 188, 2006
3 Homoepitaxial growth on 4H-SiC (03(3)over-bar-8) face by sublimation close space technique
Yoneda S, Furusho T, Takagi H, Ohta S, Nishino S
Materials Science Forum, 483, 129, 2005
4 Sublimation growth of SiC crystal using modified crucible design on 4H-SiC {03-38} substrate and defect analysis
Furusho T, Takagi H, Ota S, Shiomi H, Nishino S
Materials Science Forum, 457-460, 107, 2004
5 High quality SiC bulk growth by sublimation method using elemental silicon and carbon powder as SiC source materials
Ota S, Furusho T, Takagi H, Oshima S, Nishino S
Materials Science Forum, 457-460, 115, 2004
6 Crystal growth of 6H-SIC(01-14) on 3C-SiC(001) substrate by sublimation epitaxy
Takagi H, Nishiguchi T, Ohta S, Furusho T, Ohshima S, Nishino S
Materials Science Forum, 457-460, 289, 2004
7 Bulk crystal growth of cubic silicon carbide by sublimation epitaxy
Furusho T, Sasaki M, Ohshima S, Nishino S
Journal of Crystal Growth, 249(1-2), 216, 2003
8 Crystal growth of silicon carbide in hydrogen atmosphere by sublimation close space technique
Furusho T, Lilov SK, Ohshima S, Nishino S
Journal of Crystal Growth, 237, 1235, 2002
9 Homoepitaxial growth of cubic silicon carbide by sublimation epitaxy
Furusho T, Miyanagi T, Okui Y, Ohshima S, Nishino S
Materials Science Forum, 389-3, 279, 2002
10 Characterization of 2in SiC as-grown bulk by SWBXT at SPring-8
Sasaki M, Hirai A, Miyanagi T, Furusho T, Nishiguchi T, Shiomi H, Nishino S
Materials Science Forum, 389-3, 407, 2002