검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Highly effective III-V solar cells by controlling the surface roughnesses Hwang ST, Gil B, Yun AJ, Kim J, Kim J, Woo H, Park K, Park B Current Applied Physics, 20(7), 899, 2020 |
| 2 |
Selective rear contact for Ga0.5In0.5P- and GaAs- based solar cells Hwang ST, Hwang T, Lee S, Gil B, Park B Solar Energy Materials and Solar Cells, 182, 348, 2018 |
| 3 |
Scattering potential for interface roughness scattering Nag BR, Das M Applied Surface Science, 182(3-4), 357, 2001 |
| 4 |
Practical aspects of solid source molecular beam epitaxial growth of phosphorus-containing films Hoke WE, Lemonias PJ Journal of Vacuum Science & Technology B, 17(5), 2009, 1999 |
| 5 |
Electrochemical stability of p-GaInP2 in aqueous electrolytes toward photoelectrochemical water splitting Khaselev O, Turner JA Journal of the Electrochemical Society, 145(10), 3335, 1998 |
| 6 |
Solid source molecular beam epitaxial growth of In0.5Ga0.5P pseudomorphic high electron mobility transistor structures Hoke WE, Lemonias PJ, Beaudoin RM, Torabi A Journal of Vacuum Science & Technology B, 16(3), 1408, 1998 |
| 7 |
Reduction of oxygen contamination in InGaP and AlGaInP films grown by solid source molecular beam epitaxy Hoke WE, Lemonias PJ, Torabi A Journal of Vacuum Science & Technology B, 16(6), 3041, 1998 |
| 8 |
All-solid-source molecular beam epitaxy for growth of III-V compound semiconductors Pessa M, Toivonen M, Jalonen M, Savolainen P, Salokatve A Thin Solid Films, 306(2), 237, 1997 |
| 9 |
Heavy Be Doping of Gap and InxGa1-Xp Tagare MV, Chin TP, Woodall JM Journal of Vacuum Science & Technology B, 14(3), 2325, 1996 |
| 10 |
Solid Source Molecular-Beam Epitaxy of Low-Threshold 1.55 Mu-M Wavelength GaInAs/GaInAsP/InP Semiconductor-Lasers Johnson FG, King O, Seiferth F, Stone DR, Whaley RD, Dagenais M, Chen YJ Journal of Vacuum Science & Technology B, 14(4), 2753, 1996 |