화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Point defects, dopant atoms, and compensation effects in CdSe and CdS cleavage surfaces
Siemens B, Domke C, Ebert P, Urban K
Thin Solid Films, 343-344, 537, 1999
2 Layer-by-layer etching of GaAs (110) with halogenation and pulsed-laser irradiation
Han BY, Cha CY, Weaver JH
Journal of Vacuum Science & Technology A, 16(2), 490, 1998
3 Oscillating contrast in room-temperature scanning tunneling microscope images of localized charges in III-V semiconductor cleavage surfaces
Domke C, Heinrich M, Ebert P, Urban K
Journal of Vacuum Science & Technology B, 16(5), 2825, 1998
4 Schottky-Barrier at the Au/Gap(110) Interface
Fanfoni M, Goletti C, Chiaradia P, Ng W, Cerrina F, Hwu Y, Terrasi A, Margaritondo G
Journal of Vacuum Science & Technology A, 14(4), 2433, 1996
5 Ballistic-Electron-Emission Microscopy Studies of Electron-Scattering in Au/GaAs Schottky Diodes Damaged by Focused Ion-Beam Implantation
Mcnabb JW, Craighead HG
Journal of Vacuum Science & Technology B, 14(2), 617, 1996
6 Temperature-Dependent Vacancy Concentrations on InP(110) Surfaces
Heinrich M, Ebert P, Simon M, Urban K, Lagally MG
Journal of Vacuum Science & Technology A, 13(3), 1714, 1995
7 Interchain Vacancy Migration of GaAs(110)
Lengel G, Weimer M, Gryko J, Allen RE
Journal of Vacuum Science & Technology A, 12(4), 1855, 1994
8 Hot-Electron Scattering Effects in Metal-Semiconductor Structures and Their Role in Interface Transport
Ludeke R, Bauer A
Journal of Vacuum Science & Technology A, 12(4), 1910, 1994
9 Dynamical Transmission Effects and Impact Ionization in Hot-Electron Transport Across Nisi2/Si(111)7X7 Interfaces
Bauer A, Ludeke R
Journal of Vacuum Science & Technology B, 12(4), 2667, 1994