검색결과 : 9건
No. | Article |
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1 |
Point defects, dopant atoms, and compensation effects in CdSe and CdS cleavage surfaces Siemens B, Domke C, Ebert P, Urban K Thin Solid Films, 343-344, 537, 1999 |
2 |
Layer-by-layer etching of GaAs (110) with halogenation and pulsed-laser irradiation Han BY, Cha CY, Weaver JH Journal of Vacuum Science & Technology A, 16(2), 490, 1998 |
3 |
Oscillating contrast in room-temperature scanning tunneling microscope images of localized charges in III-V semiconductor cleavage surfaces Domke C, Heinrich M, Ebert P, Urban K Journal of Vacuum Science & Technology B, 16(5), 2825, 1998 |
4 |
Schottky-Barrier at the Au/Gap(110) Interface Fanfoni M, Goletti C, Chiaradia P, Ng W, Cerrina F, Hwu Y, Terrasi A, Margaritondo G Journal of Vacuum Science & Technology A, 14(4), 2433, 1996 |
5 |
Ballistic-Electron-Emission Microscopy Studies of Electron-Scattering in Au/GaAs Schottky Diodes Damaged by Focused Ion-Beam Implantation Mcnabb JW, Craighead HG Journal of Vacuum Science & Technology B, 14(2), 617, 1996 |
6 |
Temperature-Dependent Vacancy Concentrations on InP(110) Surfaces Heinrich M, Ebert P, Simon M, Urban K, Lagally MG Journal of Vacuum Science & Technology A, 13(3), 1714, 1995 |
7 |
Interchain Vacancy Migration of GaAs(110) Lengel G, Weimer M, Gryko J, Allen RE Journal of Vacuum Science & Technology A, 12(4), 1855, 1994 |
8 |
Hot-Electron Scattering Effects in Metal-Semiconductor Structures and Their Role in Interface Transport Ludeke R, Bauer A Journal of Vacuum Science & Technology A, 12(4), 1910, 1994 |
9 |
Dynamical Transmission Effects and Impact Ionization in Hot-Electron Transport Across Nisi2/Si(111)7X7 Interfaces Bauer A, Ludeke R Journal of Vacuum Science & Technology B, 12(4), 2667, 1994 |