화학공학소재연구정보센터
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No. Article
1 Photoluminescence and secondary ion mass spectroscopy characterization of GaAs-AlGaAs quantum wells grown on GaAs (100) substrates with different surface treatments
Guillen-Cervantes A, Rivera-Alvarez Z, Lopez-Lopez M, Koudriavtsev I, Sanchez-Resendiz VM
Applied Surface Science, 255(9), 4742, 2009
2 Photoluminescence transitions of GaAs/AlGaAs asymmetric double-well structures
Kim Y
Current Applied Physics, 6(2), 248, 2006
3 Diffusion process of electrons injected from STM tip into AlGaAs/GaAs quantum wells
Tsuruoka T, Ohizumi Y, Tanimoto R, Arafune R, Ushioda S
Applied Surface Science, 190(1-4), 275, 2002
4 Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs(n11)A (n <= 4) substrates
Feng JM, Asai K, Narukawa Y, Kawakami Y, Fujita S, Ohachi T
Applied Surface Science, 159, 532, 2000
5 Raman and photoluminescence spectroscopy from as grown and 147 keV Ar+-ion implanted AlxGa1-xAs/GaAs quantum wells
Kunert HW
Applied Surface Science, 166(1-4), 304, 2000
6 Gas-source molecular beam epitaxial growth and thermal annealing of GaInNAs/GaAs quantum wells
Xin HP, Kavanagh KL, Tu CW
Journal of Crystal Growth, 208(1-4), 145, 2000
7 Effect of rapid thermal annealing on InGaAs/GaAs quantum wells
Zhuang QD, Li JM, Zeng YP, Yoon SF, Zheng HQ, Kong MY, Lin LY
Journal of Crystal Growth, 212(1-2), 352, 2000
8 MBE growth of lattice-matched and mismatched films on non-(001) GaAs substrates
Fahy MR, Zhang XM, Tok ES, Neave JH, Vaccaro P, Fujita K, Takahashi M, Watanabe T, Sato K, Joyce BA
Thin Solid Films, 306(2), 192, 1997
9 Optical-Pumping in Solid-State Nuclear-Magnetic-Resonance
Tycko R, Reimer JA
Journal of Physical Chemistry, 100(31), 13240, 1996
10 Path-Integral Formulation of Retardation Effects in Nonlinear Optics
Chernyak V, Mukamel S
Journal of Chemical Physics, 100(4), 2953, 1994