| 1 |
High performance GaAs metal-insulator-semiconductor devices using TiO2 as insulator layer
Sonmezoglu S, Akin S
Current Applied Physics, 12(5), 1, 2012 |
| 2 |
Quantum dot lasers grown by gas source molecular-beam epitaxy
Gong Q, Chen P, Li SG, Lao YF, Cao CF, Xu CF, Zhang YG, Feng SL, Ma CH, Wang HL
Journal of Crystal Growth, 323(1), 450, 2011 |
| 3 |
Electrochemical impedance spectroscopy of carboxylic-acid terminal alkanethiol self assembled monolayers on GaAs substrates
Wu LL, Camacho-Alanis F, Castaneda H, Zangari G, Swami N
Electrochimica Acta, 55(28), 8758, 2010 |
| 4 |
In As/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy
Yang HD, Gong Q, Li SG, Cao CF, Xu CF, Chen P, Feng SL
Journal of Crystal Growth, 312(23), 3451, 2010 |
| 5 |
Wavelength elongation and improved emission efficiency of MOCVD-grown InAs quantum dots by GaNAs buffer layer
Suzuki R, Miyamoto T, Koyama F
Journal of Crystal Growth, 298, 574, 2007 |
| 6 |
Molecular layer epitaxy
Nishizawa J, Kurabayashi T
Thin Solid Films, 367(1-2), 13, 2000 |
| 7 |
Current oscillations observed during codeposition of copper and tin from sulfate solutions containing Laprol 2402C
Survila A, Mockus Z, Juskenas R
Electrochimica Acta, 43(8), 909, 1998 |
| 8 |
Nonlinear phenomena during the reduction of hydrogen peroxide in alkaline solution involving mass transfer
Li ZL, Zeng Y, Xie QJ, Yao SZ
Journal of the Electrochemical Society, 145(11), 3857, 1998 |
| 9 |
Dry etching and consequent burring regrowth of nanosize quantum wells stripes using an in situ ultrahigh vacuum multichamber system
Yoshikawa T, Sugimoto Y, Kohmoto S, Kitamura S, Makita K, Nambu Y, Asakawa K
Journal of Vacuum Science & Technology B, 16(1), 1, 1998 |
| 10 |
New Current and Potential Oscillations for Reduction Reactions on Platinum-Electrodes in Acid-Solutions Containing High-Concentration Hydrogen-Peroxide
Matsuda T, Hommura H, Mukouyama Y, Yae S, Nakato Y
Journal of the Electrochemical Society, 144(6), 1988, 1997 |
