화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Correlation between Raman intensity of the N-related local vibrational mode and N content in GaAsN strained layers grown by MOVPE
Panpech P, Vijarnwannaluk S, Sanorpim S, Ono W, Nakajima F, Katayama R, Onabe K
Journal of Crystal Growth, 298, 107, 2007
2 Growth of GaAs1-xNx on GaAs(100) by chemical beam epitaxy
Aardahl CL, Yun HK, Pearsall TP, Rogers JW, Qian M, Fong H, Sarikaya M
Thin Solid Films, 343-344, 646, 1999