검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy Fujiwara Y, Nonogaki Y, Oga R, Koizumi A, Takeda Y Applied Surface Science, 216(1-4), 564, 2003 |
| 2 |
High growth enhancement factor in arrayed waveguide by MOVPE selective area growth Moriguchi Y, Kihara T, Shimomura K Journal of Crystal Growth, 248, 395, 2003 |
| 3 |
Phase diagram calculation for epitaxial growth of GaInAs on InP considering the surface, interfacial and strain energies Nakajima K, Ujihara T, Sazaki G, Usami N Journal of Crystal Growth, 220(4), 413, 2000 |
| 4 |
Wavelength control of arrayed waveguide by MOVPE selective area growth Kihara T, Nitta Y, Suda H, Miki K, Shimomura K Journal of Crystal Growth, 221, 196, 2000 |