| 1 |
Wavelength elongation and improved emission efficiency of MOCVD-grown InAs quantum dots by GaNAs buffer layer
Suzuki R, Miyamoto T, Koyama F
Journal of Crystal Growth, 298, 574, 2007 |
| 2 |
Optical property of self-assembled GaInNAs quantum dots grown by solid source molecular beam epitaxy
Yew KC, Yoon SF, Sun ZZ, Wang SZ
Journal of Crystal Growth, 247(3-4), 279, 2003 |
| 3 |
Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells
Bian LF, Jiang DS, Lu SL
Journal of Crystal Growth, 253(1-4), 155, 2003 |
| 4 |
Gas-source molecular beam epitaxial growth and thermal annealing of GaInNAs/GaAs quantum wells
Xin HP, Kavanagh KL, Tu CW
Journal of Crystal Growth, 208(1-4), 145, 2000 |
| 5 |
GaInNAs/GaAs quantum dots grown by chemical beam epitaxy
Makino S, Miyamoto T, Kageyama T, Nishiyama N, Koyama F, Iga K
Journal of Crystal Growth, 221, 561, 2000 |
| 6 |
High performance 1.3 mu m InGaAsN : Sb/GaAs quantum well lasers grown by molecular beam epitaxy
Yang X, Heroux JB, Jurkovic MJ, Wang WI
Journal of Vacuum Science & Technology B, 18(3), 1484, 2000 |
