검색결과 : 25건
| No. | Article |
|---|---|
| 1 |
Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment Kim K, Jang J Current Applied Physics, 20(2), 293, 2020 |
| 2 |
High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O-2 treatment Seok O, Han MK, Byun YC, Kim J, Shin HC, Ha MW Solid-State Electronics, 103, 49, 2015 |
| 3 |
Low Turn-on voltage dual metal AlGaN/GaN Schottky barrier diode Chang TF, Huang CF, Yang TY, Chiu CW, Huang TY, Lee KY, Zhao F Solid-State Electronics, 105, 12, 2015 |
| 4 |
Effect of heating on electrical transport in AlGaN/GaN Schottky barrier diodes on Si substrate Woo H, Jo Y, Kim J, Roh C, Lee J, Kim H, Im H, Hahn CK, Park J Current Applied Physics, 14, S98, 2014 |
| 5 |
Micro-structural and temperature dependent electrical characterization of Ni/GaN Schottky barrier diodes Kumar A, Vinayak S, Singh R Current Applied Physics, 13(6), 1137, 2013 |
| 6 |
Reverse leakage mechanism of Schottky barrier diode fabricated on homoepitaxial GaN Lei Y, Lu H, Cao DS, Chen DJ, Zhang R, Zheng YD Solid-State Electronics, 82, 63, 2013 |
| 7 |
Leakage current and sub-bandgap photo-response of oxygen-plasma treated GaN Schottky barrier diodes Wang FX, Lu H, Xiu XQ, Chen DJ, Han P, Zhang R, Zheng YD Applied Surface Science, 257(9), 3948, 2011 |
| 8 |
pi-Conjugated polymer/GaN Schottky solar cells Matsuki N, Irokawa Y, Nakano Y, Sumiya M Solar Energy Materials and Solar Cells, 95(1), 284, 2011 |
| 9 |
Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN Jung Y, Mastro MA, Hite J, Eddy CR, Kim J Thin Solid Films, 518(20), 5810, 2010 |
| 10 |
Thermal effects on light-emission properties of GaN LEDs grown by metal-organic vapor phase epitaxy Honda T, Kobayashi T, Egawa S, Sawada M, Sugimoto K, Baba T Journal of Crystal Growth, 300(1), 90, 2007 |