검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties Dominec F, Hospodkova A, Hubacek T, Zikova M, Pangrac J, Kuldova K, Vetushka A, Hulicius E Journal of Crystal Growth, 507, 246, 2019 |
| 2 |
On the design of GaN vertical MESFETs on commercial LED sapphire wafers Atalla MRM, Elahi AMN, Mo C, Jiang ZY, Liu J, Ashok S, Xu J Solid-State Electronics, 126, 23, 2016 |
| 3 |
Growth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowing Shin IS, Lee D, Lee KH, You H, Moon DY, Park J, Nanishi Y, Yoon E Thin Solid Films, 546, 118, 2013 |
| 4 |
AlGaN/GaN heterostructure field-effect transistors with multi-MgxNy/GaN buffer and Photo-CVD SiO2 gate dielectric Lee KH, Chang PC, Chang SJ, Su YK Solid-State Electronics, 72, 38, 2012 |
| 5 |
Nitride-based blue light-emitting diodes with multiple MgxNy/GaN buffer layers Fu YK, Kuo CH, Tun CJ, Chang LC Solid-State Electronics, 54(5), 590, 2010 |
| 6 |
ZnO epitaxial layers grown on nitridated Si(100) substrate with HT-GaN/LT-ZnO double buffer Chang SP, Chang SJ, Chiou YZ, Lu CY, Lin TK, Kuo CF, Chang HM, Liaw UH Journal of Crystal Growth, 310(2), 290, 2008 |
| 7 |
Epitaxial growth of zinc oxide thin films on epi-GaN/sapphire (0001) by sol-gel technique Sagar P, Kumar M, Mehra RM, Okada H, Wakahara A, Yoshida A Thin Solid Films, 515(7-8), 3330, 2007 |
| 8 |
Pulsed laser deposition of epitaxial Al-doped ZnO film on sapphire with GaN buffer layer Kumar M, Mehra RM, Wakahara A, Ishida M, Yoshida A Thin Solid Films, 484(1-2), 174, 2005 |
| 9 |
GaN 완충층 두께가 GaN 에피층의 특성에 미치는 영향 조용석, 고의관, 박용주, 김은규, 황성민, 임시종, 변동진 Korean Journal of Materials Research, 11(7), 575, 2001 |
| 10 |
Influences of temperature ramping rate on GaN buffer layers and subsequent GaN overlayers grown by metalorganic chemical vapor deposition Wuu DS, Horng RH, Tseng WH, Lin WT, Kung CY Journal of Crystal Growth, 220(3), 235, 2000 |