검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Ge-on-insulator wafer with ultralow defect density fabricated by direct condensation of SiGe-on-insulator structure Ye L, Zhang M, Xue ZY, Yang JH, Wang X, Di ZF Applied Surface Science, 356, 1052, 2015 |
| 2 |
Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer Sawano K, Hoshi Y, Endo S, Nagashima T, Arimoto K, Yamanaka J, Nakagawa K, Yamada S, Hamaya K, Miyao M, Shiraki Y Thin Solid Films, 557, 76, 2014 |
| 3 |
Coherent lateral-growth of Ge over insulating film by rapid-melting-crystallization Sadoh T, Kurosawa M, Toko K, Miyao M Thin Solid Films, 557, 135, 2014 |
| 4 |
In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth Chikita H, Matsumura R, Tojo Y, Yokoyama H, Sadoh T, Miyao M Thin Solid Films, 557, 139, 2014 |
| 5 |
Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (111) micro-seeds Sakane T, Toko K, Tanaka T, Sadoh T, Miyao M Solid-State Electronics, 60(1), 22, 2011 |
| 6 |
Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxy Tanaka T, Tanaka M, Itakura M, Sadoh T, Miyao M Thin Solid Films, 518, S170, 2010 |
| 7 |
Ge wire MOSFETs fabricated by three-dimensional Ge condensation technique Irisawa T, Numata T, Hirashita N, Moriyama Y, Nakaharai S, Tezuka T, Sugiyama N, Takagi S Thin Solid Films, 517(1), 167, 2008 |
| 8 |
Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain Maeda T, Ikeda K, Nakaharai S, Tezuka T, Sugiyama N, Moriyama Y, Takagi S Thin Solid Films, 508(1-2), 346, 2006 |
| 9 |
Characterization of platinum gerrnanide/Ge(100) Schottky barrier height for Ge channel Metal Source/Drain MOSFET Ikeda K, Maeda T, Takagi SI Thin Solid Films, 508(1-2), 359, 2006 |