검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Strain relaxation induced surface morphology of heterogeneous GaInNAs layers grown on GaAs substrate Gelczuk L, Jozwiak G, Moczala M, Dluzewski P, Dabrowska-Szata M, Gotszalk TP Journal of Crystal Growth, 470, 108, 2017 |
| 2 |
Anisotropy of strain relaxation in heterogeneous GaInNAs layers grown by AP-MOVPE Gelczuk L, Pucicki D, Serafinczuk J, Dabrowska-Szata M, Dluzewski P Journal of Crystal Growth, 430, 14, 2015 |
| 3 |
Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers Gelczuk L, Dabrowska-Szata M, Sochacki M, Szmidt J Solid-State Electronics, 94, 56, 2014 |
| 4 |
Correlation between barrier inhomogeneities of 4H-SiC 1 A/600 V Schottky rectifiers and deep-level defects revealed by DLTS and Laplace DLTS Gelczuk L, Kamyczek P, Placzek-Popko E, Dabrowska-Szata M Solid-State Electronics, 99, 1, 2014 |
| 5 |
Anisotropic misfit strain relaxation in lattice mismatched InGaAs/GaAs heterostructures grown by MOVPE Gelczuk L, Serafinczuk J, Darowska-Szata M, Dluzewski P Journal of Crystal Growth, 310(12), 3014, 2008 |