화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Microwave performances of silicon heterostructure-FETs
Aniel F, Enciso M, Richard S, Giguerre L, Zerounian N, Crozat P, Adde R, Hackbarth T, Herzog JH, Konig U
Applied Surface Science, 224(1-4), 370, 2004
2 Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF performance
Hackbarth T, Herzog H, Hieber KH, Konig U, Mantl S, Hollander B, Lenk S, von Kanel H, Enciso M, Aniel F, Giguerre L
Solid-State Electronics, 48(10-11), 1921, 2004
3 High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET
Aniel F, Enciso-Aguilar M, Giguerre L, Crozat P, Adde R, Mack T, Seiler U, Hackbarth T, Herzog HJ, Konig U, Raynor B
Solid-State Electronics, 47(2), 283, 2003