검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Challenges in etch: What's new? Gottscho RA, Nojiri K, LaCara J Thin Solid Films, 516(11), 3493, 2008 |
| 2 |
Semiempirical profile simulation of aluminum etching in Cl-2/BCl3 plasma Cooperberg DJ, Vahedi V, Gottscho RA Journal of Vacuum Science & Technology A, 20(5), 1536, 2002 |
| 3 |
Substrate Effect on Plasma-Enhanced Chemical-Vapor-Deposited Silicon-Nitride Sherman S, Wagner S, Mucha J, Gottscho RA Journal of the Electrochemical Society, 144(9), 3198, 1997 |
| 4 |
Scaling of Si and GaAs Trench Etch Rates with Aspect Ratio, Feature Width, and Substrate-Temperature (Vol 13, Pg 92, 1995) Bailey AD, Vandesanden MC, Gregus JA, Gottscho RA Journal of Vacuum Science & Technology B, 15(2), 373, 1997 |
| 5 |
Scaling of Si and GaAs Trench Etch Rates with Aspect Ratio, Feature Width, and Substrate-Temperature Bailey AD, Vandesanden MC, Gregus JA, Gottscho RA Journal of Vacuum Science & Technology B, 13(1), 92, 1995 |
| 6 |
Real-Time in-Situ Monitoring of Surfaces During Glow-Discharge Processing - NH3 and H-2 Plasma Passivation of GaAs Aydil ES, Zhou ZH, Gottscho RA, Chabal YJ Journal of Vacuum Science & Technology B, 13(2), 258, 1995 |
| 7 |
Comparison of Advanced Plasma Sources for Etching Applications .1. Etching Rate, Uniformity, and Profile Control in a Helicon and a Multiple Electron-Cyclotron-Resonance Source Tepermeister I, Blayo N, Klemens FP, Ibbotson DE, Gottscho RA, Lee JT, Sawin HH Journal of Vacuum Science & Technology B, 12(4), 2310, 1994 |
| 8 |
Ion Velocity Distributions in Helicon Wave Plasmas - Magnetic-Field and Pressure Effects Nakano T, Giapis KP, Gottscho RA, Lee TC, Sadeghi N Journal of Vacuum Science & Technology B, 11(6), 2046, 1993 |
| 9 |
Real-Time Latent Image Monitoring During Holographic Fabrication of Submicron Diffraction Gratings Gregus JA, Green CA, Yoon E, Ostermayer FW, Hayes TR, Pawelek R, Gottscho RA, Sohail S, Naqvi H Journal of Vacuum Science & Technology B, 11(6), 2468, 1993 |