화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3 mu m grown by MOVPE on InP substrate
Grasse C, Mueller M, Gruendl T, Boehm G, Roenneberg E, Wiecha P, Rosskopf J, Ortsiefer M, Meyer R, Amann MC
Journal of Crystal Growth, 370, 217, 2013
2 GaInAs/GaAsSb-based type-II micro-cavity LED with 2-3 mu m light emission grown on InP substrate
Grasse C, Gruendl T, Sprengel S, Wiecha P, Vizbaras K, Meyer R, Amann MC
Journal of Crystal Growth, 370, 240, 2013