검색결과 : 2건
No. | Article |
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1 |
AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3 mu m grown by MOVPE on InP substrate Grasse C, Mueller M, Gruendl T, Boehm G, Roenneberg E, Wiecha P, Rosskopf J, Ortsiefer M, Meyer R, Amann MC Journal of Crystal Growth, 370, 217, 2013 |
2 |
GaInAs/GaAsSb-based type-II micro-cavity LED with 2-3 mu m light emission grown on InP substrate Grasse C, Gruendl T, Sprengel S, Wiecha P, Vizbaras K, Meyer R, Amann MC Journal of Crystal Growth, 370, 240, 2013 |