화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Defect reduction in GaN regrown on hexagonal mask structure by facet assisted lateral overgrowth
Jazi MA, Meisch T, Klein M, Scholz F
Journal of Crystal Growth, 429, 13, 2015
2 Control of topography and morphology for channel SiGe by in-situ HCl etching for future CMOS technologies with high-K metal gate
Reichel C, Kronholz S, Kammler T, Zeun A, Beernink G
Solid-State Electronics, 60(1), 134, 2011
3 In situ HCl etching of Si for the elaboration of locally misorientated surfaces
Destefanis V, Morand Y, Hartmann JM, Rouchon D, Barbe JC, Mermoux M
Applied Surface Science, 254(5), 1436, 2007
4 Chemical vapor phase etching of polycrystalline selective to epitaxial Si and SiGe
Yamamoto Y, Tillack B, Kopke K, Fursenko O
Thin Solid Films, 508(1-2), 297, 2006