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Cobalt ferrite modified with Hf(IV) as a catalyst for oxidation of ethyl acetate Tsvetkov M, Zaharieva J, Issa G, Cherkezova-Zheleva Z, Nedyalkov M, Paneva D, Tsoncheva T, Milanova M Catalysis Today, 357, 541, 2020 |
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Hf0.5Zr0.5O2 강유전체 박막의 다양한 분극 스위칭 모델에 의한 동역학 분석 안승언 Korean Journal of Materials Research, 30(2), 99, 2020 |
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새로운 플루오라이트 구조 강유전체의 Electrocaloric Effect 양건, 박주용, 이동현, 박민혁 Korean Journal of Materials Research, 30(9), 480, 2020 |
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Characterization and optimization of MIS-HEMTs device of high similar to k dielectric material on quaternary barrier of Al0.42In0.03Ga0.55N/UID-AIN/GaN/GaN heterostructure for high power switching application Tarauni YU, Thiruvadigal DJ, Joseph HB Applied Surface Science, 488, 427, 2019 |
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Physical properties of the ferroelectric capacitors based on Al-doped HfO2 grown via Atomic Layer Deposition on Si Vulpe S, Nastase F, Dragoman M, Dinescu A, Romanitan C, Iftimie S, Moldovan A, Apostol N Applied Surface Science, 483, 324, 2019 |
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Dependence of electrical properties on sulfur distribution in atomic-layer-deposited HfO2 thin film on an InP substrate Jin HS, Seok TJ, Cho DY, Park TJ Applied Surface Science, 491, 83, 2019 |
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Switching dynamics and modeling of multi-domain Zr-Doped HfO2 ferroelectric thin films Noh Y, Jung M, Yoon J, Hong S, Park S, Kang BS, Ahn SE Current Applied Physics, 19(4), 486, 2019 |
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Negative capacitance phenomena depending on the wake-up effect in the ferroelectric Si:HfO2 film Park S, Chun MC, Park S, Park GY, Jung M, Noh Y, Ahn SE, Kang BS Current Applied Physics, 19(3), 347, 2019 |
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Crystallization annealing effects on ferroelectric properties of Al-Doped HfO2 thin film capacitors using indium-tin-oxide electrodes Ryu TH, Yoon SJ, Na SY, Yoon SM Current Applied Physics, 19(12), 1383, 2019 |
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Comparative Investigation of Interfacial Characteristics between HfO2/Al2O3 and Al2O3/HfO2 Dielectrics on AlN/p-Ge Structure Kim HY, Yun HJ, Choi S, Choi BJ Korean Journal of Materials Research, 29(8), 463, 2019 |