검색결과 : 21건
| No. | Article |
|---|---|
| 1 |
Etch pit investigation of free electron concentration controlled 4H-SiC Kim HY, Shin YJ, Kim JG, Harima H, Kim J, Bahng W Journal of Crystal Growth, 369, 38, 2013 |
| 2 |
Non-Contact and Non-Destructive Characterization Alternatives of Ultra-Shallow Implanted Silicon p-n Junctions by Multi-Wavelength Raman and Photoluminescence Spectroscopy Yoo WS, Ueda T, Ishigaki T, Kang K, Fukumoto M, Hasuike N, Harima H, Yoshimoto M Journal of the Electrochemical Society, 158(1), H80, 2011 |
| 3 |
In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth Suzuki A, Bungi Y, Araki T, Nanishi Y, Mori Y, Yamamoto H, Harima H Journal of Crystal Growth, 311(10), 2776, 2009 |
| 4 |
Chiral Sum Frequency Spectroscopy of Thin Films of Porphyrin J-Aggregates Nagahara T, Kisoda K, Harima H, Aida M, Ishibashi TA Journal of Physical Chemistry B, 113(15), 5098, 2009 |
| 5 |
Influence of TiO2/electrode interface on electron transport properties in back contact dye-sensitized solar cells Fuke N, Fukui A, Islam A, Komiya R, Yamanaka R, Harima H, Han LY Solar Energy Materials and Solar Cells, 93(6-7), 720, 2009 |
| 6 |
High-quality single crystal growth and Fermi surface properties in f-electron systems Onuki Y, Settai R, Shishido H, Ikeda S, Matsuda TD, Yamamoto E, Haga Y, Aoki D, Harima H, Yamagami H Journal of Crystal Growth, 310(7-9), 1859, 2008 |
| 7 |
Application of UV-Raman Spectroscopy for characterization of the physical crystal structure following flash anneal of an ultrashallow implanted layer Yoshimoto M, Nishigaki H, Harima H, Isshiki T, Kang K, Yoo WS Journal of the Electrochemical Society, 153(7), G697, 2006 |
| 8 |
Anisotropy of electron mobility in n-type 15R-SiC studied by Raman scattering Kurimoto E, Hangyo M, Harima H, Kisoda K, Nishiguchi T, Nishino S, Nakashima S, Katsuno M, Ohtani N Materials Science Forum, 457-460, 621, 2004 |
| 9 |
Raman study of SWNTs grown by CCVD method on SiC Murakami T, Sako T, Harima H, Kisoda K, Mitikami K, Isshiki T Thin Solid Films, 464-65, 319, 2004 |
| 10 |
Raman microprobe study of carrier density profiles in modulation-doped 6H SiC Nakashima S, Nakatake Y, Yano Y, Harima H, Ohtani N, Katsuno M Materials Science Forum, 389-3, 633, 2002 |