검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Time-dependent Si etch behavior and its effect on oxide/Si selectivity in CF4+D-2 electron cyclotron resonance plasma etching Min K, Lamb HH, Hauser JR Journal of Vacuum Science & Technology B, 19(3), 695, 2001 |
| 2 |
Surface residue island nucleation in anhydrous HF/alcohol vapor processing of Si surfaces Carter RJ, Hauser JR, Nemanich RJ Journal of the Electrochemical Society, 147(9), 3512, 2000 |
| 3 |
Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition Misra V, Lazar H, Wang Z, Wu Y, Niimi H, Lucovsky G, Wortman JJ, Hauser JR Journal of Vacuum Science & Technology B, 17(4), 1836, 1999 |
| 4 |
Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing Lucovsky G, Niimi H, Wu Y, Parker CR, Hauser JR Journal of Vacuum Science & Technology A, 16(3), 1721, 1998 |
| 5 |
Time-Dependent Dielectric-Breakdown Measurements on Rpecvd and Thermal Oxides Silvestre C, Hauser JR Thin Solid Films, 277(1-2), 101, 1996 |
| 6 |
Time-Dependent Dielectric-Breakdown Measurements on Rpecvd and Thermal Oxides Silvestre C, Hauser JR Journal of the Electrochemical Society, 142(11), 3881, 1995 |