Time-dependent dielectric breakdown (TDDB) measurements have been made on 96, 121 and 147 Angstrom oxides deposited by remote plasma enhanced chemical vapor deposition (RPECVD) upon 300 degrees C Si(100) device grade substrates. The oxides were used to form an array of 10 mu m x 10 mu m square capacitors. The oxides were then subjected to electron injection from the substrate at 0.1 A cm(-2) constant stress current. Analysis of the forcing voltage during stress showed the RPECVD oxide to have an initial electron trap density of 1.7 +/- 0.2 x 10(18) cm(-3). The stress voltage rose linearly with time, giving net electron trap filling rates of 3.1 +/- 0.2 x 10(16) cm(-3) s(-1), The TDDB data were analyzed to find breakdown occurring on average in localized areas of (69 +/- 9 Angstrom)(2) containing 19 +/- 4 filled electron traps. A similarly fabricated 92 Angstrom thermal oxide showed an initial electron trap density of 5.6 +/- 2 x 10(17) cm(-3) and a net electron trap filling rate of 2.0 +/- 0.2 x 10(16) cm(-3) s(-1). For the 92 Angstrom thermal and 96 Angstrom RPECVD oxides, both approximate to 100 Angstrom thick, an average localized breakdown area of (68 +/- 11 Angstrom)(2), containing 18 +/- 3 filled electron traps was calculated. The breakdown area and electron trap numbers did not vary in a statistically significantly manner with deposition technique or oxide thickness. Analysis of the electric field showed that at breakdown for the thermal oxide 1/E = 0.0702 +/- 0.0008 cm MV(-1), while the RPECVD oxide had 1/E = 0.11 +/- 0.01 cm MV(-1).