The formation of transition metal chalcogenide (NbS2, MoS2 and NbSe2) thin films was performed by pulsed excimer laser ablation for the first time. Al2O3(012) was used as a substrate. NbS2 thin films were obtained using a target with a S/Nb composition ratio of 4.0 and at substrate temperatures as high as 600 degrees C. The films exhibited c-axis orientation. The growth conditions of NbS2 films are well explained by the substrate temperature-target composition diagram. NbS2 thin films of high crystallinity can be obtained by controlling the target composition with the S/Nb ratio and the substrate temperature. The growth conditions of NbSe2 and MoS2 thin films are quite similar to those of NbS2 films.