검색결과 : 13건
No. | Article |
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1 |
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation Posselt M, Schmidt B, Anwand W, Grotzschel R, Heera V, Mucklich A, Wundisch C, Skorupa W, Hortenbach H, Gennaro S, Bersani M, Giubertoni D, Moller A, Bracht H Journal of Vacuum Science & Technology B, 26(1), 430, 2008 |
2 |
Improved 3C-SiC films epitaxially grown on Si by flash lamp processing Stoemenos J, Panknin D, Eickhoff M, Heera V, Skorupa W Journal of the Electrochemical Society, 151(2), G136, 2004 |
3 |
Improved p-type conductivity in heavily Al-doped SiC by ion-beam-induced nano-crystallization Heera V, Madhusoodanan KN, Mucklich A, Panknin D, Skorupa W Materials Science Forum, 433-4, 395, 2002 |
4 |
Spreading resistance measurements on nanocrystalline SiC produced by ion beam induced crystallisation Madhusoodanan KN, Heera V, Panknin D, Skorupa W Applied Surface Science, 184(1-4), 209, 2001 |
5 |
p-type doping of SiC by high dose Al implantation - Problems and progress Heera V, Panknin D, Skorupa W Applied Surface Science, 184(1-4), 307, 2001 |
6 |
Investigation of Al-implanted 6H-and 4H-SiC layers after fast heating rate annealings Ottaviani L, Lazar M, Locatelli ML, Monteil Y, Heera V, Voelskow M, Skorupa W Applied Surface Science, 184(1-4), 330, 2001 |
7 |
Focused ion beam sputtering investigations on SiC Bischoff L, Teichert J, Heera V Applied Surface Science, 184(1-4), 372, 2001 |
8 |
The beneficial role of flash lamp annealing on the epitaxial growth of the 3C-SiC on Si Panknin D, Stoemenos J, Eickhoff M, Heera V, Voelskow M, Skorupa W Applied Surface Science, 184(1-4), 377, 2001 |
9 |
Improvement of the 3C-SiC/Si interface by flash lamp annealing Panknin D, Stoemenos J, Eickhoff M, Heera V, Vouroutzis N, Krotz G, Skorupa W Materials Science Forum, 353-356, 151, 2001 |
10 |
TEM investigation of Si implanted natural diamond Pecz B, Barna A, Heera V, Fontaine F, Skorupa W Materials Science Forum, 353-356, 199, 2001 |