화학공학소재연구정보센터
검색결과 : 13건
No. Article
1 P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation
Posselt M, Schmidt B, Anwand W, Grotzschel R, Heera V, Mucklich A, Wundisch C, Skorupa W, Hortenbach H, Gennaro S, Bersani M, Giubertoni D, Moller A, Bracht H
Journal of Vacuum Science & Technology B, 26(1), 430, 2008
2 Improved 3C-SiC films epitaxially grown on Si by flash lamp processing
Stoemenos J, Panknin D, Eickhoff M, Heera V, Skorupa W
Journal of the Electrochemical Society, 151(2), G136, 2004
3 Improved p-type conductivity in heavily Al-doped SiC by ion-beam-induced nano-crystallization
Heera V, Madhusoodanan KN, Mucklich A, Panknin D, Skorupa W
Materials Science Forum, 433-4, 395, 2002
4 Spreading resistance measurements on nanocrystalline SiC produced by ion beam induced crystallisation
Madhusoodanan KN, Heera V, Panknin D, Skorupa W
Applied Surface Science, 184(1-4), 209, 2001
5 p-type doping of SiC by high dose Al implantation - Problems and progress
Heera V, Panknin D, Skorupa W
Applied Surface Science, 184(1-4), 307, 2001
6 Investigation of Al-implanted 6H-and 4H-SiC layers after fast heating rate annealings
Ottaviani L, Lazar M, Locatelli ML, Monteil Y, Heera V, Voelskow M, Skorupa W
Applied Surface Science, 184(1-4), 330, 2001
7 Focused ion beam sputtering investigations on SiC
Bischoff L, Teichert J, Heera V
Applied Surface Science, 184(1-4), 372, 2001
8 The beneficial role of flash lamp annealing on the epitaxial growth of the 3C-SiC on Si
Panknin D, Stoemenos J, Eickhoff M, Heera V, Voelskow M, Skorupa W
Applied Surface Science, 184(1-4), 377, 2001
9 Improvement of the 3C-SiC/Si interface by flash lamp annealing
Panknin D, Stoemenos J, Eickhoff M, Heera V, Vouroutzis N, Krotz G, Skorupa W
Materials Science Forum, 353-356, 151, 2001
10 TEM investigation of Si implanted natural diamond
Pecz B, Barna A, Heera V, Fontaine F, Skorupa W
Materials Science Forum, 353-356, 199, 2001