화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers
Kohen D, Nguyen XS, Made RI, Heidelberger C, Lee KH, Lee KEK, Fitzgerald EA
Journal of Crystal Growth, 478, 64, 2017
2 Remote epitaxy through graphene enables two-dimensional material-based layer transfer
Kim Y, Cruz SS, Lee K, Alawode BO, Choi C, Song Y, Johnson JM, Heidelberger C, Kong W, Choi S, Qiao K, Almansouri I, Fitzgerald EA, Kong J, Kolpak AM, Hwang J, Kim J
Nature, 544(7650), 340, 2017
3 Heavy p-type carbon doping of MOCVD GaAsP using CBrCl3
Heidelberger C, Fitzgerald E
Journal of Crystal Growth, 446, 7, 2016