화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Understanding device performance by incorporating 2D-carrier profiles from high resolution scanning spreading resistance microscopy into device simulations
Nazir A, Eyben P, Clarysse T, Hellings G, Schulze A, Mody J, De Meyer K, Bender H, Vandervorst W
Solid-State Electronics, 74, 38, 2012
2 The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures
Hellings G, Hikavyy A, Mitard J, Witters L, Benbakhti B, Alian A, Waldron N, Bender H, Eneman G, Krom R, Schulze A, Vandervorst W, Loo R, Heyns M, Meuris M, Hoffmann T, De Meyer K
Thin Solid Films, 520(8), 3326, 2012
3 Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing
Hellings G, Rosseel E, Simoen E, Radisic D, Petersen DH, Hansen O, Nielsen PF, Zschatzsch G, Nazir A, Clarysse T, Vandervorst W, Hoffmann TY, De Meyer K
Electrochemical and Solid State Letters, 14(1), II39, 2011
4 Numerical analysis of the new Implant-Free Quantum-Well CMOS: DualLogic approach
Benbakhti B, Chan K, Towie E, Kalna K, Riddet C, Wang XS, Eneman G, Hellings G, De Meyer K, Meuris M, Asenov A
Solid-State Electronics, 63(1), 14, 2011
5 Short-channel epitaxial germanium pMOS transistors
Eneman G, De Jaeger B, Wang G, Mitard J, Hellings G, Brunco DP, Simoen E, Loo R, Caymax M, Claeys C, De Meyer K, Meuris M, Heyns MM
Thin Solid Films, 518, S88, 2010
6 Implantation, Diffusion, Activation, and Recrystallization of Gallium Implanted in Preamorphized and Crystalline Germanium
Hellings G, Wuendisch C, Eneman G, Simoen E, Clarysse T, Meuris M, Vandervorst W, Posselt M, De Meyer K
Electrochemical and Solid State Letters, 12(12), H417, 2009
7 Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance
Brunco DP, De Jaeger B, Eneman G, Mitard J, Hellings G, Satta A, Terzieva V, Souriau L, Leys FE, Pourtois G, Houssa M, Winderickx G, Vrancken E, Sioncke S, Opsomer K, Nicholas G, Caymax M, Stesmans A, Van Steenbergen J, Mertens PW, Meuris M, Heyns MM
Journal of the Electrochemical Society, 155(7), H552, 2008