검색결과 : 7건
No. | Article |
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1 |
Understanding device performance by incorporating 2D-carrier profiles from high resolution scanning spreading resistance microscopy into device simulations Nazir A, Eyben P, Clarysse T, Hellings G, Schulze A, Mody J, De Meyer K, Bender H, Vandervorst W Solid-State Electronics, 74, 38, 2012 |
2 |
The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures Hellings G, Hikavyy A, Mitard J, Witters L, Benbakhti B, Alian A, Waldron N, Bender H, Eneman G, Krom R, Schulze A, Vandervorst W, Loo R, Heyns M, Meuris M, Hoffmann T, De Meyer K Thin Solid Films, 520(8), 3326, 2012 |
3 |
Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing Hellings G, Rosseel E, Simoen E, Radisic D, Petersen DH, Hansen O, Nielsen PF, Zschatzsch G, Nazir A, Clarysse T, Vandervorst W, Hoffmann TY, De Meyer K Electrochemical and Solid State Letters, 14(1), II39, 2011 |
4 |
Numerical analysis of the new Implant-Free Quantum-Well CMOS: DualLogic approach Benbakhti B, Chan K, Towie E, Kalna K, Riddet C, Wang XS, Eneman G, Hellings G, De Meyer K, Meuris M, Asenov A Solid-State Electronics, 63(1), 14, 2011 |
5 |
Short-channel epitaxial germanium pMOS transistors Eneman G, De Jaeger B, Wang G, Mitard J, Hellings G, Brunco DP, Simoen E, Loo R, Caymax M, Claeys C, De Meyer K, Meuris M, Heyns MM Thin Solid Films, 518, S88, 2010 |
6 |
Implantation, Diffusion, Activation, and Recrystallization of Gallium Implanted in Preamorphized and Crystalline Germanium Hellings G, Wuendisch C, Eneman G, Simoen E, Clarysse T, Meuris M, Vandervorst W, Posselt M, De Meyer K Electrochemical and Solid State Letters, 12(12), H417, 2009 |
7 |
Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance Brunco DP, De Jaeger B, Eneman G, Mitard J, Hellings G, Satta A, Terzieva V, Souriau L, Leys FE, Pourtois G, Houssa M, Winderickx G, Vrancken E, Sioncke S, Opsomer K, Nicholas G, Caymax M, Stesmans A, Van Steenbergen J, Mertens PW, Meuris M, Heyns MM Journal of the Electrochemical Society, 155(7), H552, 2008 |