화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Direct demonstration of the'virtual gate' mechanism for current collapse in AlGaN/GaN HFETs
Wells AM, Uren MJ, Balmer RS, Hilton KP, Martin T, Missous M
Solid-State Electronics, 49(2), 279, 2005
2 Surface control of 4H-SiC MESFETs
Hilton KP, Uren MJ, Hayes DG, Johnson HK, Wilding PJ
Materials Science Forum, 389-3, 1387, 2002
3 A simple non-destructive technique to detect micropipes in silicon carbide
Morrison DJ, Keir A, Preston IH, Hilton KP, Uren MJ, Johnson CM
Materials Science Forum, 353-356, 303, 2001
4 Effect of plasma etching and sacrificial oxidation on 4H-SiC Schottky barrier diodes
Morrison DJ, Pidduck AJ, Moore V, Wilding PJ, Hilton KP, Uren MJ, Johnson CM
Materials Science Forum, 338-3, 1199, 2000
5 Surface induced instabilities in 4H-SiC microwave MESFETs
Hilton KP, Uren MJ, Hayes DG, Wilding PJ, Johnson HK, Guest JJ, Smith BH
Materials Science Forum, 338-3, 1251, 2000
6 Effect of post-implantation anneal on the electrical characteristics of Ni4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation
Morrison DJ, Wright NG, Horsfall AB, Johnson CM, O'Neill AG, Knights AP, Hilton KP, Uren MJ
Solid-State Electronics, 44(11), 1879, 2000