검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Lattice-mismatched InGaAs nanowires formed on GaAs(111)B by selective-area MOVPE Yoshimura M, Tomioka K, Hiruma K, Hara S, Motohisa J, Fukui T Journal of Crystal Growth, 315(1), 148, 2011 |
| 2 |
Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires Hayashida A, Sato T, Hara S, Motohisa J, Hiruma K, Fukui T Journal of Crystal Growth, 312(24), 3592, 2010 |
| 3 |
Analysis of twin defects in GaAs nanowires and tetrahedra and their correlation to GaAs(111)B surface reconstructions in selective-area metal organic vapour-phase epitaxy Yoshida H, Ikejiri K, Sato T, Hara S, Hiruma K, Motohisa J, Fukui T Journal of Crystal Growth, 312(1), 52, 2009 |
| 4 |
Performance and quality analysis of Mo-Si multilayers formed by ion-beam and magnetron sputtering for extreme ultraviolet lithography Hiruma K, Miyagaki S, Yanianashi H, Tanaka Y, Nishiyama I Thin Solid Films, 516(8), 2050, 2008 |
| 5 |
Effect of interface treatment with assisted ion beam on Mo-Si multilayer formation for mask blanks for extreme ultraviolet lithography Hiruma K, Miyagaki S, Yamaguchi A, Nishiyama I Journal of Vacuum Science & Technology B, 25(5), 1554, 2007 |
| 6 |
Current-voltage characteristics of GaAs nanowhiskers Haraguchi K, Hiruma K, Katsuyama T, Shimada T Current Applied Physics, 6(1), 10, 2006 |
| 7 |
The growth mechanism of nanometer-scale GaAs, InAs, and AlGaAs whiskers Haraguchi K, Hiruma K, Yazawa M, Katsuyama T Journal of the Electrochemical Society, 153(1), C1, 2006 |
| 8 |
Growth-Mechanism of Planar-Type GaAs Nanowhiskers Haraguchi K, Hiruma K, Hosomi K, Shirai M, Katsuyama T Journal of Vacuum Science & Technology B, 15(5), 1685, 1997 |
| 9 |
Rational Design and Synthesis of a 1,1-Linked Disaccharide That Is 5 Times as Active as Sialyl-Lewis-X in Binding to E-Selectin Hiruma K, Kajimoto T, Weitzschmidt G, Ollmann I, Wong CH Journal of the American Chemical Society, 118(39), 9265, 1996 |
| 10 |
SEMICONDUCTOR NANOWHISKERS YAZAWA M, KOGUCHI M, MUTO A, HIRUMA K Advanced Materials, 5(7-8), 577, 1993 |