검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Growth of quantum three-dimensional structure of InGaAs emitting at similar to 1 mu m applicable for a broadband near-infrared light source Ozaki N, Kanehira S, Hayashi Y, Ohkouchi S, Ikeda N, Sugimoto Y, Hogg RA Journal of Crystal Growth, 477, 230, 2017 |
| 2 |
Non-destructive mapping of doping and structural composition of MOVPE-grown high current density resonant tunnelling diodes through photoluminescence spectroscopy Jacobs KJP, Stevens BJ, Mukai T, Ohnishi D, Hogg RA Journal of Crystal Growth, 418, 102, 2015 |
| 3 |
Extending emission wavelength of InAs/GaAs quantum dots beyond 1.3 mu m by using quantum dot bi-layer for broadband light source Ozaki N, Nakatani Y, Ohkouchi S, Ikeda N, Sugimoto Y, Asakawa K, Clarke E, Hogg RA Journal of Crystal Growth, 378, 553, 2013 |
| 4 |
Multi-color quantum dot ensembles grown in selective-areas for shape-controlled broadband light source Ozaki N, Takeuchi K, Ohkouchi S, Ikeda N, Sugimoto Y, Asakawa K, Hogg RA Journal of Crystal Growth, 323(1), 191, 2011 |