검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Growth of InSb epilayers and quantum wells on Ge(001) substrates by molecular beam epitaxy Debnath MC, Mishima TD, Santos MB, Hossain K, Holland OW Journal of Vacuum Science & Technology B, 27(6), 2453, 2009 |
| 2 |
Ion beam analyses of carbon nanotubes Naab FU, Holland OW, Duggan JL, McDaniel FD Journal of Physical Chemistry B, 109(4), 1415, 2005 |
| 3 |
Molecular beam epitaxial growth of Fe(Si1-xGex)(2) epilayers Cottier RJ, Amir FZ, Hossain K, House JB, Gorman BP, Perez JM, Holland OW, Golding TD, Stokes DW Journal of Vacuum Science & Technology B, 23(3), 1299, 2005 |
| 4 |
Comparison of Al and Al/C Co-implants in 4H-SiC annealed with an AlN cap Jones KA, Shah PB, Derenge MA, Ervin MH, Gerardi GJ, Freitas JA, Braga GCB, Vispute RD, Sharma RP, Holland OW Materials Science Forum, 389-3, 819, 2002 |
| 5 |
Passivation of the 4H-SiC/SiO2 interface with nitric oxide Williams JR, Chung GY, Tin CC, McDonald K, Farmer D, Chanana RK, Weller RA, Pantelides ST, Holland OW, Das MK, Feldman LC Materials Science Forum, 389-3, 967, 2002 |
| 6 |
Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation Chung GY, Williams JR, Tin CC, McDonald K, Farmer D, Chanana RK, Pantelides ST, Holland OW, Feldman LC Applied Surface Science, 184(1-4), 399, 2001 |
| 7 |
Characteristics of n-p junction diodes made by double-implantations into SiC Tucker JB, Handy EM, Rao MV, Holland OW, Papanicolaou N, Jones KA Materials Science Forum, 338-3, 925, 2000 |