| 1 |
Characterisation of aluminium oxynitride gas barrier films
Erlat AG, Henry BM, Ingram JJ, Mountain DB, McGuigan A, Howson RP, Grovenor CRM, Briggs GAD, Tsukahara Y
Thin Solid Films, 388(1-2), 78, 2001 |
| 2 |
The properties of reactively-sputtered, stoichiometry-controlled and optimum-conductivity transparent indium oxide films as a function of their titanium, aluminium and zinc content; comparisons with the use of tin as a dopant
Safi I, Howson RP
Thin Solid Films, 343-344, 115, 1999 |
| 3 |
A microstructural study of transparent metal oxide gas barrier films
Henry BM, Dinelli F, Zhao KY, Grovenor CRM, Kolosov OV, Briggs GAD, Roberts AP, Kumar RS, Howson RP
Thin Solid Films, 355-356, 500, 1999 |
| 4 |
High rate reactive sputtering using gas pulsing: a technique for the creation of films onto large, fat substrates
Howson RP, Danson N, Safi I
Thin Solid Films, 351(1-2), 32, 1999 |
| 5 |
Tin Films Prepared by Unbalanced Planar Magnetron Sputtering Under Control of Photoemission of Ti
Tominaga K, Inoue S, Howson RP, Kusaka K, Hanabusa T
Thin Solid Films, 281-282, 182, 1996 |
| 6 |
Improved Control Techniques for the Reactive Magnetron Sputtering of Silicon to Produce Silicon-Oxide and the Implications for Selected Film Properties
Danson N, Hall GW, Howson RP
Thin Solid Films, 289(1-2), 99, 1996 |
| 7 |
Effects of Nitrogen Pressure and Ion Flux on the Properties of Direct-Current Reactive Magnetron-Sputtered Zr-N Films
Inoue S, Tominaga K, Howson RP, Kusaka K
Journal of Vacuum Science & Technology A, 13(6), 2808, 1995 |
| 8 |
Preparation of Compositionally Gradient Ti-Tin Films by RF Reactive Sputtering
Inoue S, Ucihda H, Takeshita K, Koterasawa K, Howson RP
Thin Solid Films, 261(1-2), 115, 1995 |
| 9 |
Structure and Composition of (Ti,Al)N Films Prepared by RF Planar Magnetron Sputtering Using a Composite Target
Inoue S, Uchida H, Hioki A, Koterazawa K, Howson RP
Thin Solid Films, 271(1-2), 15, 1995 |
