검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Subnanometer scaling of HfO2/metal electrode gate stacks Peterson JJ, Young CD, Barnett J, Gopalan S, Gutt J, Lee CH, Li HJ, Hou TH, Kim Y, Lim C, Chaudhary N, Moumen N, Lee BH, Bersuker G, Brown GA, Zeitzoff PM, Gardner MI, Murto RW, Huff HR Electrochemical and Solid State Letters, 7(8), G164, 2004 |
| 2 |
An electronics division retrospective 1952-2002 and future opportunities in the twenty-first century Huff HR Journal of the Electrochemical Society, 149(5), S35, 2002 |
| 3 |
Oxygen precipitation behavior in 300 mm polished Czochralski silicon wafers Ono T, Rozgonyi GA, Au C, Messina T, Goodall RK, Huff HR Journal of the Electrochemical Society, 146(10), 3807, 1999 |
| 4 |
Measurement of Silicon Particles by Laser-Surface Scanning and Angle-Resolved Light-Scattering Huff HR, Goodall RK, Williams E, Woo KS, Liu BY, Warner T, Hirleman D, Gildersleeve K, Bullis WM, Scheer BW, Stover J Journal of the Electrochemical Society, 144(1), 243, 1997 |
| 5 |
Interpretation of Carrier Recombination Lifetime and Diffusion Length Measurements in Silicon Bullis WM, Huff HR Journal of the Electrochemical Society, 143(4), 1399, 1996 |
| 6 |
Correlation of 150 mm P/P’ Epitaxial Wafer Flatness Parameters for Deep-Submicron Applications, (Vol 140, Pg 229, 1993) Huff HR, Popham GH, Potter RW Journal of the Electrochemical Society, 141(9), 2577, 1994 |