| 1 |
Growth of thick GaN layers on laser-processed sapphire substrate by hydride vapor phase epitaxy
Koyama K, Aida H, Kim SW, Ikejiri K, Doi T, Yamazaki T
Journal of Crystal Growth, 403, 38, 2014 |
| 2 |
Influence of growth temperature on growth of InGaAs nanowires in selective-area metal-organic vapor-phase epitaxy
Kohashi Y, Sato T, Ikejiri K, Tomioka K, Hara S, Motohisa J
Journal of Crystal Growth, 338(1), 47, 2012 |
| 3 |
Analysis of twin defects in GaAs nanowires and tetrahedra and their correlation to GaAs(111)B surface reconstructions in selective-area metal organic vapour-phase epitaxy
Yoshida H, Ikejiri K, Sato T, Hara S, Hiruma K, Motohisa J, Fukui T
Journal of Crystal Growth, 312(1), 52, 2009 |
| 4 |
Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE
Ikejiri K, Noborisaka J, Hara S, Motohisa J, Fukui T
Journal of Crystal Growth, 298, 616, 2007 |
| 5 |
A highly intense state-selected CH radical beam and its application to the CH+O-2 reaction
Ikejiri K, Ohoyama H, Nagamachi Y, Kasai T
Chemical Physics Letters, 401(4-6), 465, 2005 |
| 6 |
A highly intense state-selected OH beam source by the pulsed electric DC discharge method
Ikejiri K, Ohoyama H, Nagamachi Y, Teramoto T, Kasai T
Chemical Physics Letters, 379(3-4), 255, 2003 |
