검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Improvement of the GaSb/Al2O3 interface using a thin InAs surface layer Greene A, Madisetti S, Nagaiah P, Yakimov M, Tokranov V, Moore R, Oktyabrsky S Solid-State Electronics, 78, 56, 2012 |
| 2 |
Modeling effects of interface traps on the gate C-V characteristics of MOS devices on alternative high-mobility substrates Satter MM, Haque A Solid-State Electronics, 54(6), 621, 2010 |