검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth Takehiro S, Sakuraba M, Tsuchiya T, Murota J Thin Solid Films, 517(1), 346, 2008 |
| 2 |
Rigorous analytic solution for the drain current of undoped symmetric dual-gate MOSFETs Ortiz-Conde A, Sanchez FJG, Muci J Solid-State Electronics, 49(4), 640, 2005 |
| 3 |
Exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a threshold voltage definition therefrom Ortiz-Conde A, Sanchez FJG, Guzman M Solid-State Electronics, 47(11), 2067, 2003 |