| 1 |
Junction Formation by Doping in H2Pc:C-60 Co-Evaporated Films for Solar Cell Application
Kubo M, Shinmura Y, Ishiyama N, Kaji T, Hiramoto M
Molecular Crystals and Liquid Crystals, 581(1), 13, 2013 |
| 2 |
Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p(+)n junctions
Sakic A, Qi L, Scholtes TLM, van der Cingel J, Nanver LK
Solid-State Electronics, 84, 65, 2013 |
| 3 |
Analysis of locality of early-stage maturation in confluent state of human retinal pigment epithelial cells
Kim MH, Sonoi R, Yamada K, Inamori M, Kino-oka M
Journal of Bioscience and Bioengineering, 113(6), 778, 2012 |
| 4 |
SiliconPV 2012 generation of defect-related acceptor states by laser doping
Safiei A, Derix R, Suckow S, Koch H, Breuer U, Pletzer TM, Wolter K, Kurz H
Solar Energy Materials and Solar Cells, 106, 2, 2012 |
| 5 |
Fabrication of 0.12 mu m pMOSFETs on high Ge fraction Si/Si1-xGex/Si(100) heterostructure with ultrashallow source/drain formed using B-doped SiGeCVD
Lee D, Takehiro S, Sakuraba M, Murota J, Tsuchiya T
Applied Surface Science, 224(1-4), 254, 2004 |
| 6 |
Selected two-dimensional effects in gas immersion laser doping of unpatterned silicon
Sadra K, Ji HF
Journal of Vacuum Science & Technology B, 16(1), 116, 1998 |
| 7 |
Low parasitic resistance contacts for scaled ULSI devices
Osburn CM, Bellur KR
Thin Solid Films, 332(1-2), 428, 1998 |
| 8 |
The Influence of Fluorine on Boron-Enhanced Diffusion in Silicon by Bf2+ Implantation Through Oxide During High-Temperature Rapid Thermal Anneal
Wang LZ, Luo MS, Tseng HH, Ajuria SA
Journal of the Electrochemical Society, 144(11), L298, 1997 |
| 9 |
Ultra-Shallow Box-Like Profiles Fabricated by Pulsed Ultraviolet-Laser Doping Process
Ishida E, Sigmon TW, Weiner KH, Frost MR
Journal of Vacuum Science & Technology B, 12(1), 399, 1994 |
| 10 |
Solid Source Diffusion from Agglomerating Silicide Sources .2. Experimental Results and Analysis
Tsai JY, Osburn CM, Canovai CA
Journal of Vacuum Science & Technology B, 12(6), 3149, 1994 |
