화학공학소재연구정보센터
검색결과 : 16건
No. Article
1 Analysis of the Temperature Dependence of Trap-Assisted Tunneling in Ge pFET Junctions
Gonzalez MB, Eneman G, Wang G, Jaeger B, Simoen E, Claeys C
Journal of the Electrochemical Society, 158(10), H955, 2011
2 Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions
Vincent B, Loo R, Vandervorst W, Delmotte J, Douhard B, Valev VK, Vanbel M, Verbiest T, Rip J, Brijs B, Conard T, Claypool C, Takeuchi S, Zaima S, Mitard J, De Jaeger B, Dekoster J, Caymax M
Solid-State Electronics, 60(1), 116, 2011
3 Short-channel epitaxial germanium pMOS transistors
Eneman G, De Jaeger B, Wang G, Mitard J, Hellings G, Brunco DP, Simoen E, Loo R, Caymax M, Claeys C, De Meyer K, Meuris M, Heyns MM
Thin Solid Films, 518, S88, 2010
4 P plus /n junction leakage in thin selectively grown Ge-in-STI substrates
Eneman G, Yang R, Wang G, De Jaeger B, Loo R, Claeys C, Caymax M, Meuris M, Heyns MM, Simoen E
Thin Solid Films, 518(9), 2489, 2010
5 Low-frequency noise assessment of the silicon passivation of Ge pMOSFETs
Simoen E, Firrincieli A, Leys F, Loo R, De Jaeger B, Mitard J, Claeys C
Thin Solid Films, 518(9), 2493, 2010
6 Device performance of p-Ge MOSFETs at liquid nitrogen temperature
Ohyama H, Sukizaki H, Takakura K, Motoki M, Matsuo K, Nakamura H, Sawada M, Midorikawa C, Kuboyama S, De Jaeger B, Simoen E, Claeys C
Thin Solid Films, 518(9), 2513, 2010
7 Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches
Wang G, Loo R, Takeuchi S, Souriau L, Lin JC, Moussa A, Bender H, De Jaeger B, Ong P, Lee W, Meuris M, Caymax M, Vandervorst W, Blanpain B, Heyns MM
Thin Solid Films, 518(9), 2538, 2010
8 Observation and suppression of nickel germanide overgrowth on germanium substrates with patterned SiO2 structures
Brunco DP, Opsomer K, De Jaeger B, Winderickx G, Verheyden K, Meuris M
Electrochemical and Solid State Letters, 11(2), H39, 2008
9 Other side of climate change: Nanoparticle emission
Sommer AP, Zhu D, Jaeger B
Energy & Fuels, 22(4), 2869, 2008
10 Processing factors impacting the leakage current and flicker noise of germanium p(+)-n junctions on silicon substrates
Simoen E, Sonde S, Claeys C, Satta A, De Jaeger B, Todi R, Meuris M
Journal of the Electrochemical Society, 155(3), H145, 2008