화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate
Wu M, Zhang BS, Chen J, Liu JP, Shen XM, Zhao DG, Zhang JC, Wang JF, Li N, Jin RQ, Zhu JJ, Yang H
Journal of Crystal Growth, 260(3-4), 331, 2004
2 Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows
Liu JP, Zhang BS, Wu M, Li DB, Zhang JC, Jin RQ, Zhu JJ, Chen J, Wang JF, Wang YT, Yang H
Journal of Crystal Growth, 260(3-4), 388, 2004
3 Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells
Liu JP, Jin RQ, Zhu JJ, Zhang JC, Wang JF, Wu M, Chen J, Wang YT, Yang H
Journal of Crystal Growth, 264(1-3), 53, 2004
4 Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD
Jin RQ, Liu JP, Zhang JC, Yang H
Journal of Crystal Growth, 268(1-2), 35, 2004
5 A study of the degree of relaxation of AlGaN epilayers on GaN template
Zhang JC, Wu MF, Wang JF, Liu JP, Wang YT, Chen J, Jin RQ, Yang H
Journal of Crystal Growth, 270(3-4), 289, 2004