검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Development of polarity inversion in a GaN waveguide structure for modal phase matching Kolenda M, Kezys D, Reklaitis I, Radiunas E, Ritasalo R, Kadys A, Grinys T, Malinauskas T, Stanionyte S, Skapas M, Petruskevicius R, Tomasiunas R Journal of Materials Science, 55(26), 12008, 2020 |
| 2 |
Improvement of luminescence properties of InN by optimization of multi-step deposition on sapphire Mickevicius J, Dobrovolskas D, Malinauskas T, Kolenda M, Kadys A, Tamulaitis G Thin Solid Films, 680, 89, 2019 |
| 3 |
Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth Mickevicius J, Dobrovolskas D, Steponavicius T, Malinauskas T, Kolenda M, Kadys A, Tamulaitis G Applied Surface Science, 427, 1027, 2018 |
| 4 |
Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band Mickevicius J, Dobrovolskas D, Aleksiejunas R, Nomeika K, Grinys T, Kadys A, Tamulaitis G Journal of Crystal Growth, 459, 173, 2017 |
| 5 |
Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers Podlipskas Z, Aleksiejunas R, Nargelas S, Jurkevicius J, Mickevicius J, Kadys A, Tamulaitis G, Shur MS, Shatalov M, Yang JW, Gaska R Current Applied Physics, 16(6), 633, 2016 |
| 6 |
Photoisomerization of Azophenylcarbazole Self-assembled Monolayer on GaN Studied by Kelvin Probe Bikbajevas V, Kadys A, Tomasiunas R, Puras R, Urnikaite S, Getautis V Molecular Crystals and Liquid Crystals, 604(1), 52, 2014 |
| 7 |
InxGa1 _N-x performance as a band-gap-tunable photo-electrode in acidic and basic solutions Juodkazyte J, Sebeka B, Sayickaja I, Kadys A, Jelmakas E, Grinys T, Juodkazis S, Juodkazis K, Malinauskas T Solar Energy Materials and Solar Cells, 130, 36, 2014 |
| 8 |
High-excitation luminescence properties of m-plane GaN grown on LiAlO2 substrates Miasojedovas S, Mauder C, Krotkus S, Kadys A, Malinauskas T, Jarasiunas K, Heuken M, Kalisch H, Vescan A Journal of Crystal Growth, 329(1), 33, 2011 |
| 9 |
Nonequilibrium carrier diffusion and recombination in heavily-doped and semi-insulating bulk HTCVD grown 4H-SiC crystals Storasta L, Aleksiejunas R, Sudzius M, Kadys A, Malinauskas T, Jarasiunas K, Magnusson B, Janzen E Materials Science Forum, 483, 409, 2005 |