검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Breakdown voltage improvement of 4H-SiC Schottky diodes by a thin surface implant Khemka V, Chatty K, Chow TP, Gutmann RJ Materials Science Forum, 338-3, 1211, 2000 |
| 2 |
Comparison of nitrogen and phosphorus implanted, planar, high-voltage 4H-SiC junction rectifiers Chatty K, Khemka V, Chow TP, Gutmann RJ Materials Science Forum, 338-3, 1331, 2000 |
| 3 |
Al/C/B Co-implanted high-voltage 4H-SiC PiN junction rectifiers Fedison JB, Li Z, Khemka V, Ramungul N, Chow TP, Ghezzo M, Kretchmer JW, Elasser A Materials Science Forum, 338-3, 1367, 2000 |
| 4 |
SiC and GaN bipolar power devices Chow TP, Khemka V, Fedison J, Ramungul N, Matocha K, Tang Y, Gutmann RJ Solid-State Electronics, 44(2), 277, 2000 |
| 5 |
Thermal-Oxidation of (100)Silicon in O-2 and CO2 and in Effect on the SiO2-Si Metal-Oxide-Semiconductor Parameters Khemka V, Chow TP Journal of the Electrochemical Society, 144(3), 1137, 1997 |
| 6 |
Inductively-Coupled Plasma for Polymer Etching of 200 mm Wafers Forgotson N, Khemka V, Hopwood J Journal of Vacuum Science & Technology B, 14(2), 732, 1996 |