화학공학소재연구정보센터
검색결과 : 12건
No. Article
1 Selective Wet-Chemical Etching of the Barrier Layer during Formation of Porous Anodic Aluminum Oxide Template
Park SH, Kim S, Lee DJ, Yun S, Khim ZG, Kim KB
Journal of the Electrochemical Society, 156(11), K181, 2009
2 Growth of a single layer gold stripe and investigation of the preferable growth direction on reconstructed Au(111) surface using STM
Phark SH, Khim ZG, Yoon S
Current Applied Physics, 8(6), 822, 2008
3 Electrophoretic route to Bi2Sr2CaCu2O8+y films and microfibers from superconducting colloids
Jang ES, Chang JJ, Jeon SH, Khim ZG, Choy JH
Advanced Materials, 17(14), 1742, 2005
4 Effects of Co implantation in BaTiO3, SrTiO3, and KTaO3
Lee JS, Khim ZG, Park YD, Norton DP, Budai JD, Boatner LA, Pearton SJ, Wilson RG
Electrochemical and Solid State Letters, 6(4), J1, 2003
5 Magnetic properties of Co- and Mn-implanted BaTiO3, SrTiO3 and KTaO3
Lee JS, Khim ZG, Park YD, Norton DP, Theodoropoulou NA, Hebard AF, Budai JD, Boatner LA, Pearton SJ, Wilson RG
Solid-State Electronics, 47(12), 2225, 2003
6 Ferromagnetism in Co- and Mn-doped ZnO
Theodoropoulou NA, Hebard AF, Norton DP, Budai JD, Boatner LA, Lee JS, Khim ZG, Park YD, Overberg ME, Pearton SJ, Wilson RG
Solid-State Electronics, 47(12), 2231, 2003
7 Investigation on hydrogen annealing effect for various ferroelectric films by electrostatic force microscope
Shin S, Pi UH, Kim DJ, Kang BS, Noh TW, Khim ZG
Applied Surface Science, 188(3-4), 411, 2002
8 Synthesis and magnetic studies of uniform iron nanorods and nanospheres
Park SJ, Kim S, Lee S, Khim ZG, Char K, Hyeon T
Journal of the American Chemical Society, 122(35), 8581, 2000
9 Effect of photoenhanced minority carriers in metal-oxide-semiconductor capacitor studied by scanning capacitance microscopy
Shin S, Kye JI, Pi UH, Khim ZG, Hong JW, Park SI, Yoon S
Journal of Vacuum Science & Technology B, 18(6), 2664, 2000
10 Detection and control of ferroelectric domains by an electrostatic force microscope
Hong JW, Kahng DS, Shin JC, Kim HJ, Khim ZG
Journal of Vacuum Science & Technology B, 16(6), 2942, 1998