| 1 |
Al(2)O(3) thin film growth on Si (100) using binary reaction sequence chemistry (vol 292, pg 135, 1997)
Ott AW, Klaus JW, Johnson JM, George SM
Thin Solid Films, 517(20), 5950, 2009 |
| 2 |
Atomically controlled growth of tungsten and tungsten nitride using sequential surface reactions
Klaus JW, Ferro SJ, George SM
Applied Surface Science, 162, 479, 2000 |
| 3 |
Atomic layer deposition of tungsten nitride films using sequential surface reactions
Klaus JW, Ferro SJ, George SM
Journal of the Electrochemical Society, 147(3), 1175, 2000 |
| 4 |
SiO2 chemical vapor deposition at room temperature using SiCl4 and H2O with an NH3 catalyst
Klaus JW, George SM
Journal of the Electrochemical Society, 147(7), 2658, 2000 |
| 5 |
Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction
Klaus JW, Ferro SJ, George SM
Thin Solid Films, 360(1-2), 145, 2000 |
| 6 |
Growth of SiO2 at Room-Temperature with the Use of Catalyzed Sequential Half-Reactions
Klaus JW, Sneh O, George SM
Science, 278(5345), 1934, 1997 |
| 7 |
Al3O3 Thin-Film Growth on Si(100) Using Binary Reaction Sequence Chemistry
Ott AW, Klaus JW, Johnson JM, George SM
Thin Solid Films, 292(1-2), 135, 1997 |
| 8 |
Surface-Chemistry for Atomic Layer Growth
George SM, Ott AW, Klaus JW
Journal of Physical Chemistry, 100(31), 13121, 1996 |
