| 1 |
Solar photo-Fenton-like process at neutral pH: Fe(III)-EDDS complex formation and optimization of experimental conditions for degradation of pharmaceuticals
Lumbaque EC, Araujo DS, Klein TM, Tiburtius ERL, Arguello J, Sirtori C
Catalysis Today, 328, 259, 2019 |
| 2 |
Undulating Topography of HfO2 Thin Films Deposited in a Mesoscale Reactor Using Hafnium (IV) tert Butoxide
Li KJ, Zhang L, Dixon DA, Klein TM
AIChE Journal, 57(11), 2989, 2011 |
| 3 |
Atomic layer deposition of HfO2: Growth initiation study on metallic underlayers
Platt CL, Li N, Li KJ, Klein TM
Thin Solid Films, 518(15), 4081, 2010 |
| 4 |
Epitaxial film growth of chromium dioxide by low pressure chemical vapor deposition using chromium carbonyl
Wang JW, Pathak M, Zhong X, LeClair P, Klein TM, Gupta A
Thin Solid Films, 518(23), 6853, 2010 |
| 5 |
Plasma enhanced chemical vapor deposition of Cr2O3 thin films using chromium hexacarbonyl (Cr(CO)(6))precursor
Wang JW, Gupta A, Klein TM
Thin Solid Films, 516(21), 7366, 2008 |
| 6 |
In situ attenuated total reflectance Fourier transform infrared spectroscopy of hafnium(IV) tert butoxide adsorption onto hydrogen terminated Si(100) and Si(111)
Li K, Dubey S, Bhandari HB, Hu Z, Turner CH, Klein TM
Journal of Vacuum Science & Technology A, 25(5), 1389, 2007 |
| 7 |
Effect of O-2 flow ratio on the microstructure and stress of room temperature reactively sputtered RuOx thin films
Shi JX, Huang F, Weaver ML, Klein TM
Journal of Vacuum Science & Technology A, 23(3), 452, 2005 |
| 8 |
Comparison of hafnium silicate thin films on silicon (100) deposited using thermal and plasma enhanced metal organic chemical vapor deposition
Rangarajan V, Bhandari H, Klein TM
Thin Solid Films, 419(1-2), 1, 2002 |
| 9 |
Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon
Chambers JJ, Busch BW, Schulte WH, Gustafsson T, Garfunkel E, Wang S, Maher DM, Klein TM, Parsons GN
Applied Surface Science, 181(1-2), 78, 2001 |
| 10 |
Hydrogenated silicon nitride thin films deposited between 50 and 250 degrees C using nitrogen/silane mixtures with helium dilution
Klein TM, Anderson TM, Chowdhury AI, Parsons GN
Journal of Vacuum Science & Technology A, 17(1), 108, 1999 |
